THIN FILM TRANSISTOR FORMED ON FLEXIBLE SUBSTRATE AND METHOD OF MANUFACTURING THE SAME

摘要

A thin film transistor ("TFT") includes a poly silicon layer formed on a flexible substrate and including a source region, a drain region, and a channel region, and a gate stack formed on the channel region of the poly silicon layer, wherein the gate stack includes first and second gate stacks, and a region of the poly silicon layer between the first and second gate stacks is an off-set region. A method of manufacturing the TFT is also provided.