| 摘要 |
semiconductor device includes a first nonvolatile memory element group which includes a plurality of first nonvolatile memory elements programmed with data by electrically and irreversibly varying device characteristics, a verify circuit which detects a defective first nonvolatile memory element in the first nonvolatile memory element group, and a second nonvolatile memory element group which includes a plurality of second nonvolatile memory elements programmed with data by electrically and irreversibly varying device characteristics and which stores address data to rescue the defective first nonvolatile memory element.
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