发明名称 |
Semiconductor Device, Method For Manufacturing The Semiconductor Device And Portable Electronic Device Provided With The Semiconductor Device |
摘要 |
A semiconductor device, which is characterized by that two or more island-shaped semiconductor layers including first and second island-shaped semiconductor layers are formed on the same substrate, at least the first island-shaped semiconductor layer has steps in its side wall so that sectional area of a cross section parallel to the surface of the substrate varies stepwise with respect to height in the vertical direction, the second island-shaped semiconductor layer is different from the first island-shaped semiconductor layer with respect to the presence/absence of a step in the side wall or the number of steps, and each of the first and second island-shaped semiconductor layers provides an element on a stair part of the side wall divided by the steps or on the side wall having no steps.
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申请公布号 |
US2007278625(A1) |
申请公布日期 |
2007.12.06 |
申请号 |
US20050592034 |
申请日期 |
2005.03.07 |
申请人 |
MASUOKA FUJIO;YOKOYAMA TAKASHI;TANIGAMI TAKUJI;HORII SHINJI |
发明人 |
MASUOKA FUJIO;YOKOYAMA TAKASHI;TANIGAMI TAKUJI;HORII SHINJI |
分类号 |
H01L21/8234;H01L23/48;H01L21/20;H01L21/28;H01L21/336;H01L21/822;H01L21/8246;H01L21/8247;H01L27/04;H01L27/088;H01L27/10;H01L27/115;H01L29/788;H01L29/792 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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