GAN-HEMT (HIGH ELECTRON MOBILITY TRANSISTOR) STRUCTURE WITH INNER FIELD-PLATE STRUCTURE FOR HIGH POWER APPLICATIONS

摘要

A GaN-HEMT(High Electron Mobility Transistor) structure with an inner field-plate structure for high power applications is provided to reduce a gate leakage current and to implement a high breakdown voltage by interposing an inner electric field electrode between a gate electrode and a drain electrode. An aluminum gallium nitride(GaAlN) barrier layer(20) is formed on a gallium nitride(GaN) buffer layer(10). A source electrode(30) is located on the barrier layer. A drain electrode(40) is separated from the source electrode to be located on the barrier layer. A gate electrode(50) is separated from the source electrode and the drain electrode to be located on an upper surface of the barrier layer. A dielectric(60) is deposited on the upper surface of the barrier layer. An electric field electrode(70) is formed on the dielectric of an upper portion of the gate electrode. An inner electric field electrode(80) is formed in the dielectric to be separated from the gate electrode and the drain electrode. The inner electric field electrode is not overlapped with the electric field electrode.