| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin-film transistor capable of ensuring capacity without reducing the thickness of a gate insulating film. SOLUTION: A gate silicon oxide film 15 and a gate silicon nitride film 16 are sequentially laminated on an undercoat layer 4 so as to cover an active layer 5. An interlayer silicon nitride film 26 and an interlayer silicon oxide film 27 are sequentially laminated on a gate insulating film 14 so as to cover a gate electrode 19. The Si/N ratio of the gate silicon nitride film 16 is set higher than the Si/N ratio of the interlayer silicon nitride film 26. The intra-film atom density of the gate silicon nitride film 16 is set higher than the intra-film atom density of the interlayer silicon nitride film 26. The intra-film fixed charge density of the interlayer silicon nitride film 26 becomes larger than the intra-film fixed charge density of the gate silicon nitride film 16. Thus, the thin-film transistor 24 capable of establishing compatibility between suppression of defective and microfabrication, low power consumption can be manufactured. COPYRIGHT: (C)2008,JPO&INPIT
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