SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING SAME

摘要

A semiconductor element is provided with a semiconductor layer (10); a first conductivity type semiconductor region (15s) formed on a front surface (10s) of the semiconductor layer; a second conductivity type semiconductor region (14s) formed on the circumference of the first conductivity type semiconductor region (15s) on the front surface (10s) of the semiconductor layer; and a conductor (19) having a conductive surface (19s) which is brought into contact with the first conductivity type semiconductor region (15s) and the second conductivity type semiconductor region (14s). The semiconductor layer (10) includes silicon carbide, and at least the first conductivity type semiconductor region (15s) or the conductive surface (19s) is not circular. Each of the first conductivity type semiconductor region (15s) and the conductive surface (19s) has a shape wherein the length of a portion, which is of the profile of the conductive surface (19s) and traverses the first conductivity type semiconductor region (15s), smoothly changes as the shift quantity of alignment between the conductive surface (19s) and the first conductivity type semiconductor region (15s) increases from zero to 1/3 of the width of the conductive surface (19s).