| 发明名称 |
VERTICAL MEMORY DEVICE AND METHOD |
| 摘要 |
<p>Method and apparatus are described for a memory cell includes a substrate, a body extending vertically from the substrate, a first gate having a vertical member and a horizontal member and a second gate comprising a vertical member and a horizontal member. The first gate is disposed laterally from the body and the second gate is disposed laterally from the first gate. The horizontal member of the first gate overlaps the horizontal member of the second gate.</p> |
| 申请公布号 |
KR20070114185(A) |
申请公布日期 |
2007.11.29 |
| 申请号 |
KR20077021686 |
申请日期 |
2006.03.31 |
| 申请人 |
INTEL CORP. |
发明人 |
ZHENG JUN FEI;KALAVADE PRANAV |
| 分类号 |
H01L29/788;H01L21/8247;H01L27/115;H01L29/423 |
主分类号 |
H01L29/788 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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