发明名称 POWER SEMICONDUCTOR MODULE
摘要 <P>PROBLEM TO BE SOLVED: To provide a power semiconductor module which can be produced easily and is improved in electromagnetic compatibility. <P>SOLUTION: The power semiconductor module (10) comprises an arrangement including an insulation substrate (14) and a circuit board (16) separated from the substrate (14) by a housing case (18). The inner side (20) of the substrate (14) opposed to the circuit board (16) is in contact with a first conductive path (22) with which a power semiconductor element (28) driven by a controlling IC element (34) is brought to contact. On the inner side (38) of the circuit board (16) opposed to the substrate (14), a second conductive path (40) is prepared. In the housing case (18), an elastic joint (42) is pressure-welded between the first and the second conductive path (22) and (40) by a morphologically stable pressing member (44). The optimal electromagnetic compatibility is provided when an IC conductive path (32) and a controlling IC element (24), as well as the first conductive path (22), are prepared on the inner side (20) of the substrate (14). <P>COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007305983(A) 申请公布日期 2007.11.22
申请号 JP20070113014 申请日期 2007.04.23
申请人 SEMIKRON ELEKTRONIK GMBH & CO KG 发明人 POPP RAINER;LEDERER MARCO
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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