发明名称 CHARACTER PATTERN EXTRACTING METHOD, CHARGED PARTICLE BEAM EXPOSURE METHOD, AND CHARACTER PATTERN EXTRACTING PROGRAM
摘要 PROBLEM TO BE SOLVED: To provide a character pattern extracting method which can shorten a design time of a character projection aperture. SOLUTION: The character pattern extracting method includes a step S104 which ranks character patterns more than the maximum number formable in an aperture according to the reference number of design data of a semiconductor device, a step S105 which extracts a first extracting pattern of the number of extraction less than the maximum number from many character patterns in an order of the more reference number, a step S106 which defines the patterns other than the first extracting patterns among many character patterns as a plurality of the next patterns respectively, a step S108 which makes up a plurality of sorts of combinations where the number subtracting the number of extraction from the maximum number are selected from a plurality of the next patterns, and a step S122 which extracts a plurality of a second extracting patterns that are contained in a combination of the shortest manufacturing time of a semiconductor device among a plurality of sort of combinations. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007305880(A) 申请公布日期 2007.11.22
申请号 JP20060134395 申请日期 2006.05.12
申请人 TOSHIBA CORP 发明人 NAKASUGI TETSUO;OTA TAKUMI;KOSHIBA TAKESHI;SASAKI NORIAKI
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
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