A method of fabricating a semiconductor device (200) is provided. In a described embodiment, the method comprises depositing a hydrocarbon layer (294) over a semiconductor substrate, forming an interconnect structure (295, 297) within the hydrocarbon layer, and removing the hydrocarbon layer by sublimation.
申请公布号
WO2007076250(A3)
申请公布日期
2007.11.15
申请号
WO2006US61907
申请日期
2006.12.12
申请人
TEXAS INSTRUMENTS INCORPORATED;RAMAPPA, DEEPAK, A.;GULDI, RICHARD, L.;HAIDER, ASAD;POAG, FRANK
发明人
RAMAPPA, DEEPAK, A.;GULDI, RICHARD, L.;HAIDER, ASAD;POAG, FRANK
