METHOD OF DEPOSITING DIELECTRIC LAYER WITH INCREASED GAP-FILL ABILITY

摘要

A method for depositing a dielectric layer is provided to increase a gap-fill property of the dielectric layer by reducing a deposition speed at an inlet hole while increasing the deposition speed at a lower portion of a groove. An inlet of a groove is processed to have a polarity, so that a source is not deposited on the inlet(S1). A dielectric layer is deposited(S2). The polarity process and the dielectric layer deposition process are alternatively performed for multiple times. A plasma surface treatment is performed by using a polar gas or a metal film deposition is used to perform the polarity process. A deposition speed at the inlet of the groove is smaller than the deposition speed at a lower portion of the groove, so that the dielectric layer is filled in the groove without generating a void. The dielectric layer is an undoped silicon, a silicon nitride film, or a silicon oxide film.