GALLIUM NITRIDE COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THE SAME, AND LAMP

摘要

PROBLEM TO BE SOLVED: To provide a method for gallium nitride compound semiconductor light emitting device assuring low drive voltage (Vf) and high light extracting efficiency, and also to provide the same gallium nitride compound semiconductor light emitting device and a lamp.

SOLUTION: In the method for manufacturing a gallium nitride compound semiconductor light emitting device, a light transmitting conductive oxide film 15 including a dopant is laminated on a p-type semiconductor layer of the gallium nitride compound semiconductor device 1. The method includes a step of laser annealing to conduct the annealing process to the light transmitting conductive oxide film 15 using the laser, after lamination of the light transmitting conductive oxide film 15.

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