发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PROBLEM TO BE SOLVED: To prevent electrostatic breakdown of an IC capable of input and output operation in a plurality of frequency ranges from a low frequency band to a high frequency band. SOLUTION: A high frequency section of the IC is equipped with a protection circuit which comprises a multistage connection of diode connection transistors. Furthermore, the transistors which are each independently separated with insulating material capable of preventing thyristor operation are employed for the protection circuit. COPYRIGHT: (C)2008,JPO&INPIT
申请公布号 JP2007288210(A) 申请公布日期 2007.11.01
申请号 JP20070159760 申请日期 2007.06.18
申请人 RENESAS TECHNOLOGY CORP 发明人 TAKIGAWA KUMIKO;TANAKA SATOSHI
分类号 H01L21/822;H01L27/04;H01L27/06;H01L27/08 主分类号 H01L21/822
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