发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT |
摘要 |
PROBLEM TO BE SOLVED: To prevent electrostatic breakdown of an IC capable of input and output operation in a plurality of frequency ranges from a low frequency band to a high frequency band. SOLUTION: A high frequency section of the IC is equipped with a protection circuit which comprises a multistage connection of diode connection transistors. Furthermore, the transistors which are each independently separated with insulating material capable of preventing thyristor operation are employed for the protection circuit. COPYRIGHT: (C)2008,JPO&INPIT
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申请公布号 |
JP2007288210(A) |
申请公布日期 |
2007.11.01 |
申请号 |
JP20070159760 |
申请日期 |
2007.06.18 |
申请人 |
RENESAS TECHNOLOGY CORP |
发明人 |
TAKIGAWA KUMIKO;TANAKA SATOSHI |
分类号 |
H01L21/822;H01L27/04;H01L27/06;H01L27/08 |
主分类号 |
H01L21/822 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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