Silicon carbide semiconductor device producing method, involves forming carbon layer on semiconductor layer, and heating semiconductor layer for activation of implanted impurity in semiconductor layer, where carbon layer is utilized as mask

摘要

The method involves forming a carbon layer on a silicon carbide semiconductor layer (2), and heating the semiconductor layer for activation of an implanted impurity in the semiconductor layer, where the semiconductor layer inclusive of an impurity layer (3) is covered with the carbon layer. The carbon layer is removed from the semiconductor layer. An organic solvent resist is heated for damping an organic substance in a resist. An oxide film (7) is formed after removing the carbon layer. The carbon layer formed from a cover is used as a mask that contacts the semiconductor layer.