| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a forming method for a resist pattern in which a three dimensional shape of the resist pattern can sufficiently be controlled. <P>SOLUTION: After a preparatory resist pattern 63 having a projection part 63T at a position P3 corresponding to a flare point is formed by selectively exposing and developing a resist film, the preparatory resist pattern 63 is heated to form a resist pattern for forming a main magnetic pole layer. In the heating process, an influence of thermal contraction is reduced because the projection part 63T is formed on the preparatory resist pattern 63, so the preparatory resist pattern 63 is not apt to become round at the position P3. Further, the preparatory resist pattern 63 has thermal flow and thermal contraction in the heating process and then while an internal wall of an opening part 63K tilts, the projection part 63T moves back. Consequently, a photoresist pattern is nearly in a desired three dimensional shape. <P>COPYRIGHT: (C)2008,JPO&INPIT |
