| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device in which forming of a forbidden region in boundary can be controlled between a thin film Tr (transistor) region and a thick film Tr region. SOLUTION: The method of manufacturing the semiconductor device comprises: a process (a) for laminating a first insulation film 2 and a silicon nitride film 3 on a semiconductor substrate 1 in this order; a process (b) for removing the first insulation film 2 and the silicon nitride film 3 in the thick film Tr region by a dry etching method, while leaving the first insulation film 2 and the silicon nitride film 3 in the thin film Tr region different from the thick film Tr region; a process (c) for forming a second insulation film 5 with a film thickness different from that of the first insulation film 2 on the semiconductor substrate 1 of the thick film Tr region, and on the silicon nitride film 3 in the second region (the thin film Tr region); and a process (d) for removing the silicon nitride film 3 and the second insulation film 5 in the thin film Tr region. COPYRIGHT: (C)2008,JPO&INPIT
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