ULTRA VIOLET(UV) RADIATION TREATMENT METHODS FOR SUB ATMOSPHERIC CHEMICAL VAPOR DEPOSITION(SACVD) OF OZONE-TETRAETHOXYSILANE(O3-TEOS)

摘要

An UV(Ultra Violet) radiation treatment method for an SACVD(Sub Atmospheric Chemical Vapor Deposition) of O3-TEOS(Ozone-Tetraethoxysilane) is provided to increase a tensile stress by shrinking an inside of a thin film by reducing an amount of moisture and silanol in the thin film. An UV radiation treatment method for an SACVD of O3-TEOS includes the steps of: forming an O3-TEOS layer(106) on a semiconductor substrate(100) by performing the SACVD of the O3-TEOS; and performing an UV process on the O3-TEOS. In the semiconductor substrate, a selective trench liner(104) and the O3-TEOS layer are buried in a trench(102). An STI(Shallow Trench Isolation) region(108) is defined by the SACVD O3-TEOS layer and the selective trench liner in the trench.