POWER METAL OXIDE SILICON FIELD EFFECT TRANSISTOR

摘要

A power MOS-FET is provided to improve the flow efficiency of current by increasing a contact surface between gates and sources while occupying a small area with respect to a unit region. A first body(13) and a second body(14) are connected to each other in one direction so that a connecting pattern(15) between sources formed by n+ dopant is not isolated by gates(11,12). A p-type body formed under an n+ region is connected to a p-type body formed on a drift region in a tunnel shape. A surface, on which the n+ region connected to the first and second bodies via the connecting pattern intersects the gates, is increased toward both sides of the connecting pattern.