| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability of an ohmic electrode under the environment of high humidity while securing sufficient reliability of the ohmic electrode under the environment of high temperature. SOLUTION: The semiconductor device is provided with: a substrate 11; a tantalum layer 9, provided with an n-type semiconductor layer 3 or an undoped semiconductor layer and ohmic electrodes 12, 13 while the ohmic electrodes 12, 13 are formed on the n-type semiconductor layer 3 or the undoped semiconductor layer, an aluminum layer 10 formed on the tantalum layer 9; and a metal layer 9 formed on the aluminum layer 10 and consisting of either one material among tantalum, nickel, paladium and molybdenum. COPYRIGHT: (C)2008,JPO&INPIT |
