| 摘要 |
A pixel cell, an image sensor adopting the same, and an image processing system including the image sensor are provided to minimize a dark level by not forming a metal contact on a photodiode. An image sensor adopting a pixel cell includes a first semiconductor pattern(111), a second semiconductor pattern(113), a photoelectric converting device(115), and at least one of transistors. An isolation layer is located between the first and second semiconductor pattern(111,113) so that the first and the second semiconductor patterns(111,113) face each other. The photoelectric converting device(115) is formed on the second semiconductor pattern(113). The transistor is formed on the first semiconductor pattern. The transistor is coupled with the photoelectric converting device(115) for detecting a signal charge generated at the photoelectric converting device(115). The photoelectric converting device(115) includes a first conductive region(113n) and a second conductive region(113p).
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