| 摘要 |
PROBLEM TO BE SOLVED: To enhance the output power of an optical semiconductor element, such as SLD, SOA, etc, which has an oblique optical waveguide structure, without deteriorating its wide-band properties. SOLUTION: The optical semiconductor element 1 has a configuration wherein a first conductivity-type electrode 41, a semiconductor active layer 15, and a second conductivity-type electrode 42 are formed on a first conductivity-type semiconductor substrate 11. The optical semiconductor element 1 is equipped with an optical waveguide 50 which is extended from a first optical waveguide opening 51 formed on the one element end surface 1R of the optical semiconductor element 1, communicates with a second optical guide opening 52 formed on the one element end surface 1R or the other element end surface 1F, and, at least, extends its part at an oblique angle to the direction of the normal of the one element end surface 1R. The optical waveguide 50 is formed in a wide pattern, which is equipped with a wide part 55 wider than the widths W1 and W2 of the first and second optical waveguide openings 51 and 52, within a certain range except the vicinities of both the first optical waveguide opening 51 and the second optical waveguide opening 52. COPYRIGHT: (C)2008,JPO&INPIT
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