| 摘要 |
PROBLEM TO BE SOLVED: To provide a magnetic memory in which the direction of magnetization of a magnetosensitive layer can be altered by feeding a small current through simple control; and to provide a spin injection method. SOLUTION: According to this spin injection method, the direction of magnetization can be altered with a small current because spin transfer torque assisted by the external magnetic field E<SB>X</SB>acts on the direction of magnetization. Consequently, since the direction of magnetization of a magnetosensitive layer F1 can be altered by simply reducing the strength of the external magnetic field E<SB>X</SB>in the magnetosensitive layer F1 performing initial assist, small current control is not required, and the direction of magnetization of the magnetosensitive layer can be altered by feeding a small current through simple control. COPYRIGHT: (C)2008,JPO&INPIT
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