发明名称 |
Vertical high volt semiconductor device`s e.g. thyristor, lip, has lateral semiconductor device provided in boundary region adjacent to cell field to contribute to current load-carrying capacity when high volt semiconductor device is on |
摘要 |
<p>The lip has a semiconductor body (1) with a semiconductor layer (3) of a conductive type, where the body has an inner area with a cell field (Z) in its front side (4) and a boundary region (R) partly surrounding the inner area. A lateral semiconductor device e.g. lateral field effect transistor, is provided in the region adjacent to the field. The device contributes to its current load-carrying capacity in switched on condition of a high volt semiconductor device e.g. thyristor, and is closable in switched off condition of the high volt semiconductor device. An independent claim is also included for a procedure for manufacturing a lip for an insulated gate bipolar transistor (IGBT).</p> |
申请公布号 |
DE102006014580(A1) |
申请公布日期 |
2007.10.11 |
申请号 |
DE20061014580 |
申请日期 |
2006.03.29 |
申请人 |
INFINEON TECHNOLOGIES AUSTRIA AG |
发明人 |
RUEB, MICHAEL |
分类号 |
H01L29/06;H01L21/331;H01L29/739;H01L29/78 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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