METHOD OF FORMING DYNAMIC RANDOM ACCESS MEMORY AND CAPACITOR FORMED IN DYNAMIC RANDOM ACCESS MEMORY

摘要

PROBLEM TO BE SOLVED: To provide a method of forming a dynamic random access memory having a highly stored capacitance using a dielectric layer having a high dielectric constant.

SOLUTION: The method includes: a process for preparing a substrate at least having a drain region and a bottom electrode to be electrically coupled to the drain region, a process for forming a first barrier layer on the bottom electrode, a process for forming a dielectric layer having a high dielectric constant, a process for forming a second barrier layer on the dielectric layer, and a process for forming an uppermost electrode.

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