| 摘要 |
A method for etching plasma, an apparatus for etching the plasma, a computer recording medium, and a recording medium where a process recipe is recorded are provided to prevent an underlayer of a metal film with a high melting point from being rough. A method for etching plasma includes the steps of: performing a first plasma etching that the etching speed of a grain boundary unit is faster than the etching speed of a grain; and performing a second plasma etching with the selectivity of a metal film with a high melting point of an underlayer to be higher than the first etching step. The first etching step is converted to the second etching step before the underlayer of the grain boundary unit is exposed. The underlayer is an insulating film.
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