发明名称 Photoelectric conversion device, solid-state imaging device and manufacturing method of solid-state imaging device
摘要 A photoelectric conversion device comprising a lower electrode, an upper electrode opposing to the lower electrode and a photoelectric conversion layer provided between the lower electrode and the upper electrode, the photoelectric conversion device being for collecting a photocurrent upon application of a bias voltage between the lower electrode and the upper electrode, wherein the upper electrode works as an electrode in a light incident side, the upper electrode is transparent, and the lower electrode is a metallic electrode having a function to reflect light.
申请公布号 US2007228503(A1) 申请公布日期 2007.10.04
申请号 US20070730434 申请日期 2007.04.02
申请人 FUFJIFILM CORPORATION 发明人 YOKOYAMA DAISUKE
分类号 H01L27/14 主分类号 H01L27/14
代理机构 代理人
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