发明名称 |
Devices and Methods of Preventing Plasma Charging Damage in Semiconductor Devices |
摘要 |
Methods for protecting semiconductor devices from plasma charging damage are disclosed. An example disclosed method includes depositing an etching stop layer on a substrate with at least one predetermined structure; depositing a premetallic dielectric layer and a charge preservation layer on the entire surface of the etching stop layer; depositing an insulating layer on the surface of the resulting structure; and forming an metallic interconnect on the insulating layer.
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申请公布号 |
US2007228430(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20070759383 |
申请日期 |
2007.06.07 |
申请人 |
KIM JAE H |
发明人 |
KIM JAE H. |
分类号 |
H01L21/283;H01L29/94;H01L21/336;H01L21/768;H01L21/8234;H01L23/522;H01L23/62;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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