发明名称 |
Patterning trenches in a photoresist layer with tight end-to-end separation |
摘要 |
A method for forming two trenches with tight end-to-end spacing in a dielectric layer begins with providing a substrate having a dielectric layer. A hard-mask layer is deposited on the dielectric layer and a first photoresist layer is deposited on the hard-mask layer. The first photoresist layer is patterned to form an extended trench in the first photoresist layer. The hard-mask layer is then etched using the first photoresist layer as a mask to form an extended trench in the hard-mask layer. Next, a second photoresist layer is deposited on the hard-mask layer and patterned to form a resist line that intersects the extended trench. The resist line divides the extended trench into two separate trenches. The dielectric layer is then etched using the hard-mask layer and the resist line as a mask, thereby forming two trenches in the dielectric layer with end-to-end separation that corresponds to the resist line width.
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申请公布号 |
US2007231748(A1) |
申请公布日期 |
2007.10.04 |
申请号 |
US20060393096 |
申请日期 |
2006.03.29 |
申请人 |
SIVAKUMAR SWAMINATHAN;WALLACE CHARLES |
发明人 |
SIVAKUMAR SWAMINATHAN;WALLACE CHARLES |
分类号 |
G03F7/26 |
主分类号 |
G03F7/26 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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