发明名称 MATERIAL FOR FORMING RESIST PROTECTION FILMS AND METHOD FOR RESIST PATTERN FORMATION WITH THE SAME
摘要 <p>The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.</p>
申请公布号 EP1840655(A1) 申请公布日期 2007.10.03
申请号 EP20050819797 申请日期 2005.12.22
申请人 TOKYO OHKA KOGYO CO., LTD. 发明人 ENDO, KOTARO;ISHIDUKA, KEITA
分类号 G03F7/11;C08F220/22;H01L21/027 主分类号 G03F7/11
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