| 摘要 |
A thin stoichometric Cd Se layer is formed by evaporating Cd and Se from separate crucibles on to a Se, glass or ceramic base under vacuum, the temperature of the crucibles and base being such that excess particles are re-evaporated. A doping substance e.g. thallium or indium may be deposited from one of the existing crucibles or from a separate crucible.ALSO:A thin stoichiometric Cd Se layer is formed by evaporating Cd and Se from separate crucibles on to a Se, glass or ceramic base under vacuum, the temperature of the crucibles and base being such that excess particles are re-evaporated. A doping substance, e.g. thallium or indium, may be deposited from one of the existing crucibles or from a separate crucible.
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