| 摘要 |
A CMOS image sensor is provided to increase the focusing efficiency of light by re-reflecting the light reflected by a photodiode by a reflection layer and irradiating the re-reflected light to the photodiode. A plurality of photodiodes(31) are formed in a semiconductor substrate at regular intervals. A first interlayer dielectric is formed on the front surface of the semiconductor substrate including each photodiode. A reflection layer(40) is formed on the first interlayer dielectric to have an opening(42) corresponding to each photodiode. A second interlayer dielectric is formed on the front surface of the first interlayer dielectric including the reflection layer. A plurality of color filter layers(34) are formed on the second interlayer dielectric at regular intervals. A planarization layer(35) is formed on the front surface of the semiconductor substrate including the color filter layer. Micro lenses(36) are formed on the planarization layer, corresponding to each photodiode. The opening can correspond to a region where the light focused by the micro lenses is irradiated to the photodiode.
|
