| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high productivity process for forming deep recesses and protrusions exhibiting reflectance reduction effect by forming an etching mask effective, even for etching with no directivity, such as hot wire method using a simple process that does not include photoengraving, and etching a substrate, using atomic hydrogen generated by hot wire method. <P>SOLUTION: In the production process of photovoltaic device, a texture for reducing the reflectance of a surface, on which the light of a semiconductor substrate constituting the photovoltaic device impinges is formed, by etching with atomic hydrogen generated by touching hydrogen gas to a heated filament of high-melting point metal. An etching mask is formed, by performing flocculation attaching of silicon oxide particles having a primary particle diameter of 80-400 nm, in mesh, onto the surface, prior to etching. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
