| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a silicon carbide semiconductor device which can reduce the wasteful amount of semiconductor material. SOLUTION: A first silicon carbide epitaxial layer 2 is laminated on a silicon carbide substrate 1. Thereafter, a mask 4 for selective growth is laminated on the first silicon carbide epitaxial layer 2 so that a predetermined selective area 3 on the first silicon carbide epitaxial layer 2 is left. Then a second silicon carbide epitaxial layer is laminated on the selective area 3 on the first silicon carbide epitaxial layer 2 as a selective growth layer 5. Next, the selective growth mask 4 is removed, and the height of a step 6 formed at the boundary between an area on the first epitaxial layer 2 other than the removed selective growth mask 4 and the selective area 3 having the selective growth layer 5 laminated thereon is measured. Part of the selective growth layer 5 is removed by an amount corresponding to the measured height of the step 6. As a result, the thickness of the selective growth layer 5 can be accurately measured and when part of the selective growth layer 5 is removed, the amount of removal of the first silicon carbide epitaxial layer 2 can be made highly small. COPYRIGHT: (C)2007,JPO&INPIT
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