发明名称 |
SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF |
摘要 |
A semiconductor device including a substrate, a gate dielectric layer, a gate, a pair of source/drain regions and a stressed layer is disclosed. The gate dielectric layer is disposed on the substrate and the gate whose top area is larger than its bottom area is disposed on the gate dielectric layer. The source/drain regions are disposed in the substrate next to the sidewalls of the gate. The stressed layer is disposed on the substrate to cover the gate and the source/drain regions.
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申请公布号 |
US2007224745(A1) |
申请公布日期 |
2007.09.27 |
申请号 |
US20060308390 |
申请日期 |
2006.03.21 |
申请人 |
CHANG HUI-CHEN;LIN TONY;HSU BROOK;CHEN CYRUS LW;LEE MENG-LIN;SHIAU WEI-TSUN |
发明人 |
CHANG HUI-CHEN;LIN TONY;HSU BROOK;CHEN CYRUS LW;LEE MENG-LIN;SHIAU WEI-TSUN |
分类号 |
H01L21/8234 |
主分类号 |
H01L21/8234 |
代理机构 |
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代理人 |
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