SILICON PHOTOVOLTAIC CELL JUNCTION FORMED FROM THIN FILM DOPING SOURCE

摘要

A method and apparatus for fabricating a solar cell and forming a p-n junction is disclosed. Solar cell p-n junction is formed by depositing a thin film of n-type phosphorus doped silicon material on a sheet from a mixture of precursors and annealing the sheet to obtain the p-n junction at a desired depth. In one embodiment, a plasma enhanced chemical vapor deposition chambers is used to deposit a phosphorus doped amorphous silicon film on a sheet surface by using precursors including a silicon-containing gas, a hydrogen-containing precursor, and a phosphorus-containing gas. In another embodiment, annealing furnace and/or rapid thermal processing chambers are used to anneal the sheet having the phosphorus doped amorphous silicon film deposited thereon.