| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain a high luminance by improving the light extraction efficiency and also high-output operation by improving heat radiation, while achieving cost reduction. <P>SOLUTION: The semiconductor light-emitting apparatus has a substrate 101, multiple nitride semiconductor layers 120 including an LED structure formed on the substrate 101 by growth, and p-side high-reflection electrodes 107 formed on the nitride semiconductor layer 120. A first opening 101a that exposes the nitride semiconductor layer 120 is formed on the substrate 101. The p-side high-reflection electrode 107 is formed to counter the first opening 101a and the peripheral region of the first opening 101a on the substrate 101. <P>COPYRIGHT: (C)2007,JPO&INPIT |
