| 摘要 |
The invention is directed to an anti-fuse comprised of a substrate, a gate electrode, and a gate dielectric layer. The gate electrode is located on the substrate. The gate dielectric layer is placed between the gate electrode and the substrate. The method of programming the anti-fuse is accomplished by applying a bias voltage to between the gate electrode and the substrate to break down the gate dielectric layer and convert the resistance between the gate electrode and the substrate to be smaller than that before the breakdown of the gate dielectric layer happens. By using the anti-fuse, area occupied by the anti-fuse in the chip is decreased and the programming of the anti-fuse can be done after the chip is packed.
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