发明名称 |
MOSFET HAVING RECESSED CHANNEL AND METHOD OF FABRICATING THE SAME |
摘要 |
A MOSFET having a recessed channel and a method of fabricating the same. The critical dimension (CD) of a recessed trench defining the recessed channel in a semiconductor substrate is greater than the CD of the gate electrode disposed on the semiconductor substrate. As a result, the misalignment margin for a photolithographic process used to form the gate electrodes can be increased, and both overlap capacitance and gate induced drain leakage (GIDL) can be reduced.
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申请公布号 |
US2007210357(A1) |
申请公布日期 |
2007.09.13 |
申请号 |
US20070748973 |
申请日期 |
2007.05.15 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JI-YOUNG |
分类号 |
H01L29/76;H01L21/336;H01L27/148;H01L29/423;H01L29/49;H01L29/78 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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