Semiconductor device having quantum well structure, and method of forming the same,申请号EP20050002169-传众专利搜索

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发明名称	Semiconductor device having quantum well structure, and method of forming the same
摘要
申请公布号	EP1598909(A3)	申请公布日期	2007.09.12
申请号	EP20050002169	申请日期	2005.02.02
申请人	SUMITOMO ELECTRIC INDUSTRIES, LTD.	发明人	KYONO, TAKASHI;UENO, MASAKI;AKITA, KATSUSHI
分类号	H01L33/06;H01S5/343;H01L21/20;H01L21/205;H01L33/32;H01S5/34	主分类号	H01L33/06
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