发明名称 Method for fabricating semiconductor device and equipment for fabricating the same
摘要 A method for fabricating a semiconductor device and an equipment for fabricating the semiconductor device are described. According to the method and the equipment, a semiconductor substrate is irradiated with a particle beam through an opening formed in a thin film portion of a stencil mask having the thin film portion and a supporting portion supporting the thin film portion. The method and the equipment are controlled so that the supporting portion of the stencil mask can be irradiated with the fringe of the particle beam. As a result, the method and the equipment provide suppressing deterioration such as deformation or breakage of the stencil mask.
申请公布号 US7267927(B2) 申请公布日期 2007.09.11
申请号 US20030743290 申请日期 2003.12.23
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 SHIBATA TAKESHI;SUGURO KYOICHI
分类号 G03C5/00;G03F7/20;H01L21/027 主分类号 G03C5/00
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