发明名称 |
Method for fabricating semiconductor device and equipment for fabricating the same |
摘要 |
A method for fabricating a semiconductor device and an equipment for fabricating the semiconductor device are described. According to the method and the equipment, a semiconductor substrate is irradiated with a particle beam through an opening formed in a thin film portion of a stencil mask having the thin film portion and a supporting portion supporting the thin film portion. The method and the equipment are controlled so that the supporting portion of the stencil mask can be irradiated with the fringe of the particle beam. As a result, the method and the equipment provide suppressing deterioration such as deformation or breakage of the stencil mask.
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申请公布号 |
US7267927(B2) |
申请公布日期 |
2007.09.11 |
申请号 |
US20030743290 |
申请日期 |
2003.12.23 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
SHIBATA TAKESHI;SUGURO KYOICHI |
分类号 |
G03C5/00;G03F7/20;H01L21/027 |
主分类号 |
G03C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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