METAL OXIDE PARTICLE, POLISHING MATERIAL CONTAINING SAME, SUBSTRATE POLISHING METHOD USING SUCH POLISHING MATERIAL, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

Disclosed is a metal oxide particle which is obtained by subjecting a metal compound to a heat treatment at 1000°C or higher. This metal oxide particle has a crystallite size of not less than 30 nm and a crystal strain of not more than 1%. Also disclosed are a polishing material containing such metal oxide particles, a substrate polishing method using such a polishing material, and a method for manufacturing a semiconductor device. The metal oxide particle enables to prevent or reduce occurrence of polishing scratches on a silicon oxide film, a metal buried film or the like even in a high-speed polishing.