| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device capable of highly efficiently applying photoelectric conversion to generated carriers even for lights of R, G, B having different wavelength, and to provide a method of manufacturing the semiconductor device. <P>SOLUTION: The semiconductor device executes photoelectric conversion of an incident light using a depletion layer generated on a junction interface between a p-type substrate 1 and an n-type well 2 after forming the n-type well 2 on a predetermined region of the p-type substrate 1. In this semiconductor device, a junction interface J<SB>1</SB>of the bottom side of the n-type well 2 is provided on a depth where the range of a depletion layer K<SB>1</SB>to be generated on the bottom side of the n-type well 2 becomes within a range of the depth of entry of the light of this wavelength depending on the wavelength of the light subjected to the photoelectric conversion, a trench 22 deeper than the depth of the depletion layer K<SB>1</SB>to be generated on the bottom side of the n-type well 2 and larger than the widths of depletion layers K<SB>2</SB>, K<SB>3</SB>to be generated on the side of the n-type well 2 is formed so that junction interfaces J<SB>2</SB>, J<SB>3</SB>of the side of the n-type well 2 can be deleted, and an insulating layer 21 is embedded into the trench 22. <P>COPYRIGHT: (C)2007,JPO&INPIT |
