| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve a problem of a conventional light emitting diode that a current leakage to adjacent elements is caused when a plurality of independently driven light emitting elements are going to be formed on one substrate. <P>SOLUTION: The compound semiconductor light emitting element sequentially laminates a current block layer formed on one principal side of an n-type substrate by sequentially laminating at least p-type epitaxial layer, and an n-type epitaxial layer; an n-type clad layer; a p-type active layer; and a p-type clad layer. A compound semiconductor light emitting device has at least one emitting element constituted as described above. The device has a paired positive and negative electrode comprising n-type clad layer side electrode connected to the n-type clad layer, and a p-type clad layer side electrode connected to the p-type clad layer. Accordingly, light is emitted from the one principal side by feeding a current to the positive/negative electrodes. <P>COPYRIGHT: (C)2007,JPO&INPIT |
