| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device suitable for protecting an MOS (metal oxide semiconductor) transistor in a protection circuit from breakage even when an overvoltage is impressed on an electrode pad. <P>SOLUTION: The protection circuits of respective electrode pads 6 are equipped with ESD (external symbol dictionary) protection elements 12, 14 for releasing signals of overvoltage to power supply terminals; and voltage control terminals 16, 18 having threshold voltages higher than those of ESD protection elements 12, 14, connected so as to be conducted at overvoltage side than the ESD protection elements 12, 14, and connected between the ESD protection elements 12, 14 and the electrode pad 6. In this case, the connecting point of the ESD protection elements 12, 14 and the voltage control elements 16, 18 is connected to the connecting point of ESD protection elements 12, 14 opposing to the neighboring protection circuits and the voltage control elements 16, 18 through distribution wirings 20, 22. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
