发明名称 STACKED SEMICONDUCTOR DEVICE WITH INTEGRATED SENSOR MOUNTED THEREON
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a sensor circuit and an addressing type image sensor for actualing high pixel aperture ratio while each signal charge of all pixels can be accumulated in a substantially simultaneous way. <P>SOLUTION: Two or more pixels 11 arranged in matrix form are connected in parallel every n pieces at a common node 13 to form two or more pixel blocks 12. Each pixel block 12 includes n pieces of transfer gates TG<SB>1</SB>-TG<SB>n</SB>for opening and closing each path jointing n pieces of photoelectric transfer elements PD<SB>1</SB>-PD<SB>n</SB>connected in parallel at the common node 13, each photoelectric transfer element PD<SB>1</SB>-PD<SB>n</SB>, and the common node 13. As for each pixel block 12, a common reset transistor Tr<SB>RST</SB>for resetting the whole pixel 11 and a common amplifying transistor Tr<SB>AMP</SB>for amplifying signal read out from n pieces of pixels 11 are provided at external portion of the pixel block 12. <P>COPYRIGHT: (C)2007,JPO&INPIT</p>
申请公布号 JP2007228460(A) 申请公布日期 2007.09.06
申请号 JP20060049605 申请日期 2006.02.27
申请人 KOYANAGI MITSUMASA 发明人 KOYANAGI MITSUMASA
分类号 H01L27/146;H04N5/335;H04N5/353;H04N5/369;H04N5/374 主分类号 H01L27/146
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