发明名称 METHOD FOR FABRICATING ORGANIC THIN FILM TRANSISTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a method for fabricating an organic thin film transistor element with high performance and less deterioration in a simple process. SOLUTION: The organic thin film transistor element fabricating method fabricates the organic thin film transistor element on a support body including a gate electrode, a gate insulating layer, an organic semiconductor layer, a source electrode, and a drain electrode. The method comprises: a process for forming an organic semiconductor protective layer after a process for forming an organic semiconductor layer; a process for forming a light shielding layer on the organic semiconductor protective layer; and a process for removing the organic semiconductor protective layer other than the light shielding layer, after the process for radiating an active energy line toward a surface with the light shielding layer formed thereon in the support body. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007227595(A) 申请公布日期 2007.09.06
申请号 JP20060046394 申请日期 2006.02.23
申请人 KONICA MINOLTA HOLDINGS INC 发明人 OKADA MASAKAZU
分类号 H01L29/786;H01L51/05 主分类号 H01L29/786
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