发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR WAFER
摘要 A manufacturing method for a semiconductor device formed in a device region composed of a plurality of semiconductor layers on a substrate, the method including a trench forming step of forming a trench on the substrate around the device region and a semiconductor growth step of growing the semiconductor layer in the device region.
申请公布号 US2007205481(A1) 申请公布日期 2007.09.06
申请号 US20070745889 申请日期 2007.05.08
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 ISHIDA MASAHIRO
分类号 H01L27/095;C30B25/02;C30B25/18;C30B29/40;H01L21/20;H01L29/06;H01L33/00 主分类号 H01L27/095
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