| 摘要 |
A wiring method is provided to thicken wirings in order to improve productivity by forming a first seed layer through a liftoff method, even when a space width between wirings is narrow. A seed layer is formed on an insulating layer(12) disposed on a substrate(18) through a liftoff method. A conductive metal is precipitated and grown on the seed layer by an electrolytic plating method using the seed layer as a power feeding layer. The substrate has wiring formation regions(A) each having plural wirings. The seed layer has a first seed layer(14) disposed on the insulating layer and a second seed layer(22) disposed on the insulating layer located between the wiring formation regions. The second seed layer is formed integrally with the first seed layer. |
