发明名称 |
Cleaning solution and method for selectively removing layer in a silicidation process |
摘要 |
A cleaning solution selectively removes a titanium nitride layer and a non-reacting metal layer. The cleaning solution includes an acid solution and an oxidation agent with iodine. The cleaning solution also effectively removes a photoresist layer and organic materials. Moreover, the cleaning solution can be employed in tungsten gate electrode technologies that have been spotlighted because of the capability to improve device operation characteristics.
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申请公布号 |
US7265040(B2) |
申请公布日期 |
2007.09.04 |
申请号 |
US20030728517 |
申请日期 |
2003.12.05 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM SANG-YONG;LEE KUN-TACK |
分类号 |
H01L21/28;H01L21/4763;C11D3/395;C11D7/08;C11D11/00;H01L21/027;H01L21/304;H01L21/308;H01L21/311;H01L21/3205;H01L21/3213;H01L21/336;H01L23/52;H01L29/78 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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