| 摘要 |
<p>A method for manufacturing a semiconductor device is provided to prevent over exposure of a resist layer corresponding to a boundary region of a dual exposure by setting the boundary region on an isolation region, a first or second guard ring, or a region between the first guard ring and a memory cell region. A resist layer is formed on a substrate(1) to be processed. The resist layer is exposed by using a multi-exposure. The multi-exposure includes a first exposure for forming a latent image corresponding to a first pattern in the resist layer, and a second exposure for forming a latent image corresponding to a second pattern in the resist layer. A boundary region(12) of the multi-exposure is set on an isolation region, a first guard ring(5) or a second guard ring(7), or a region between the first guard ring and a memory cell region(4). The resist layer is developed to form a resist pattern. The substrate to be processed is etched by using the resist pattern as a mask.</p> |
